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| Preliminary data SIPMOS(R) Power Transistor * P-Channel * Enhancement SPD08P06P SPU08P06P mode * Avalanche rated * dv/dt rated * 175C operating temperature Pin 1 G Type SPD08P06P SPU08P06P VDS -60 V ID RDS(on) Package @ VGS VGS = -10 V P-TO252 Pin 2 D Pin 3 S Ordering Code Q67040-S4153-A2 -8.8 A 0.3 P-TO251-3-1 Q67040-S4154-A2 Maximum Ratings , at Tj = 25C, unless otherwise specified Parameter Continuous drain current TC = 25 C TC = 100 C Pulsed drain current TC = 25 C Avalanche energy, single pulse ID = -8.8 A, VDD = -25 V, RGS = 25 Avalanche current,periodic limited by Tjmax Avalanche energy,periodic limited by Tj(max) Reverse diode dv/dt IS = -8.8 A, VDD V(BR)DSS, di/dt = 200 A/s, Tjmax = 175 C Gate source voltage Power dissipation TC = 25 C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj Tstg 20 42 -55 ... +175 -55 ... +175 55/175/56 V W C EAS IAR EAR dv/dt 70 -8.8 4.2 6 mJ A mJ kV/s IDpulse Symbol ID -8.8 -6.2 -35.2 Value Unit A Semiconductor Group 1 07 / 1998 Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) RthJC RthJA tbd Symbol min. Values typ. - SPD08P06P SPU08P06P Unit max. 3.6 50 K/W Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA Gate threshold voltage, VGS = VDS ID = -460 A Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = 25 C VDS = -60 V, VGS = 0 V, Tj = 150 C Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-Source on-state resistance VGS = -10 V, ID = -6.2 A IGSS RDS(on) VGS(th) IDSS -0.1 -10 0.18 -1 -100 -100 0.3 nA -2.1 -3 -4 A V(BR)DSS -60 V 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 07 / 1998 Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Transconductance VDS2*ID*RDS(on)max , ID = -6.2 A Input capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time VDD = -30 V, VGS = -10 V, ID = -8.8 A, RG = 6 Rise time VDD = -30 V, VGS = -10 V, ID = -8.8 A, RG = 6 Turn-off delay time VDD = -30 V, VGS = -10 V, ID = -8.8 A, RG = 6 Fall time VDD = -30 V, VGS = -10 V, ID = -8.8 A, RG = 6 tf 60 td(off) 90 tr 36 td(on) 14 Crss 65 gfs Ciss Coss Symbol min. 1.5 Values typ. 3.6 335 105 SPD08P06P SPU08P06P Unit max. 420 135 95 21 ns S pF 54 135 90 Semiconductor Group 3 07 / 1998 Preliminary data SPD08P06P SPU08P06P Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold VDD = -48 V, ID- 0,1 A, VGS = 0 to - 1 V Gate charge at Vgs=7V VDD = -48 V, ID = -8.8 A, VGS = 0 to -7 V Gate charge total VDD = -48 V, ID = -8.8 A, VGS = 0 to -10 V Gate plateau voltage VDD = -48 V, ID = -8.8 A V(plateau) 3.85 V Qg(7) Qg 7.8 10 11.7 15 nC QG(th) Symbol min. Values typ. 0.36 max. 0.54 nC Unit Reverse Diode Inverse diode continuous forward current T C = 25 C Inverse diode direct current,pulsed T C = 25 C Inverse diode forward voltage VGS = 0 V, IF = -17.6 A Reverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = -30 V, IF=l S , di F/dt = 100 A/s trr Qrr 60 100 90 150 ns nC VSD -1.2 -1.7 V ISM -35.2 IS -8.8 A Semiconductor Group 4 07 / 1998 Preliminary data Power Dissipation Ptot = f (TC) SPD08P06P SPD08P06P SPU08P06P Drain current ID = f (TC) parameter: VGS 10 V SPD08P06P 45 W 9 A Ptot 35 30 25 20 15 10 5 0 0 ID 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 C 180 20 40 60 80 100 120 140 C 180 TC Tj Semiconductor Group 5 07 / 1998 Preliminary data Typ. output characteristics I D = f (VDS) parameter: tp = 80 s SPD08P06P SPD08P06P SPU08P06P Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = -6.2 A, VGS = -10 V SPD08P06P -20 A Ptot = 42W l k j i VGS [V] -4.0 b -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 -20.0 0.9 ha c -16 ID -14 -12 -10 e g RDS(on) 0.7 0.6 0.5 0.4 0.3 typ 0.2 98% d e ff g h i -8 d j k -6 c l -4 b -2 0 0.0 a 0.1 0.0 -60 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 V -7.5 -20 20 60 100 C 180 VDS Tj Semiconductor Group 6 07 / 1998 Preliminary data Gate threshold voltage Typ. transfer characteristics ID= f ( VGS ) parameter: tp = 80 s VDS 2 x I D x R DS(on)max -30 A SPD08P06P SPU08P06P VGS(th) = f (Tj) parameter: V GS = VDS, ID = -460 A SPD08P06P -4.6 V -4.0 98% -24 VGS(th) -3.6 typ -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 -60 -20 20 60 100 C 175 ID -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 0 -1 -2 -3 -4 -5 -6 -7 -8 V 2% 180 -10 V GS Typ. capacitances C = f(V DS) Parameter: V GS=0 V, f=1 MHz 10 3 Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 s SPD08P06P 10 2 A pF C Ciss IF 10 1 10 2 Coss Crss 10 0 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 5 10 15 20 25 30 V 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 - V DS VSD 7 07 / 1998 Semiconductor Group Preliminary data Avalanche Energy E AS = f (Tj) parameter: ID = -8.8 A,VDD = -25 V RGS = 25 70 SPD08P06P SPU08P06P Typ. gate charge VGS = f (QGate) parameter: ID puls =-8.8A SPD08P06P 16 V mJ EAS 50 VGS 12 10 40 8 30 6 20 4 10 0,2 VDS max 0,8 VDS max 2 0 20 40 60 80 100 120 140 C 180 0 0 2 4 6 8 10 Tj 14 nC QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD08P06P 71 V 68 V(BR)DSS 66 64 62 60 58 56 54 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 07 / 1998 Preliminary data SPD08P06P SPU08P06P Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the Semiconductor Group 9 07 / 1998 |
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